Research and learning

1947–1956

Transistor Evidence: Which Gain?

Use a recorded experimental sequence and invented signal measurements to distinguish voltage, current and power gain, with explicit units and assumptions.

Original three-panel learning diagram accompanying the worked example.
4 µW
Invented input signal power
20 µW
First invented output signal power

The short answer

Read the historical record, work through the invented example, then identify which conclusions depend on the example’s assumptions.

Read the distinctions

The invented measurements

Compare the kind of statement being made before treating two claims as equivalent.

Historical predicates and invented examples are distinguished in the article.
QuestionFirst outputSecond output
Voltage gain101
Current gain0.50.5
Power ratio50.5

Chronology

A timeline of the turning points

  1. Device history

    The museum dates the point-contact work to this month.

  2. Retrospective account

    The lecture separates different gains.

The historical sequence matters

Bardeen’s 1956 lecture describes an early gold-contact test that produced some voltage amplification but no power amplification, followed by closely spaced contacts that worked as a point-contact transistor. The record distinguishes that experimental route from the original field-effect proposal.

Brattain’s lecture credits Ohl, Scaff and Theuerer for semiconductor materials. Reading those acknowledgements beside the device account restores the preparation and expertise that a one-person invention story leaves out.

Sources for this section: [1] · [2]

Three ratios answer different questions

The selected device account discusses current, voltage and power amplification separately. That distinction motivates the calculation below; its numbers are invented and are not measurements of the 1947 transistor.

Define this exercise’s average input and output signal powers as P=V×I. The listed voltages and currents are RMS values with voltage and current in phase at each port. No reactive phase correction is needed under that stipulation. A DC supply provides the energy required by the active device; signal gain is not energy creation.

Sources for this section: [1]

Invented measurements

At the input, use 20 mV and 0.2 mA. At the output, use 200 mV and 0.1 mA. Compute voltage gain, current gain, input signal power, output signal power and their power ratio. Does the smaller output current imply that the output signal power must also be smaller? Repeat the power comparison if the output were only 20 mV at the same 0.1 mA.

Write units at every conversion. One millivolt is 0.001 V and one milliampere is 0.001 A. Report powers in microwatts. This fixture asks only about the stated ports and signals; it does not ask for total device efficiency or a safe circuit design.

Sources for this section: [1]

Reference answer and what it establishes

Voltage gain is 200/20=10. Current gain is 0.1/0.2=0.5. Input power is 0.020×0.0002=0.000004 W, or 4 µW. Output power is 0.200×0.0001=0.000020 W, or 20 µW. Power gain is 20/4=5, also 10×0.5. The second output has 2 µW, so its power ratio is 0.5. A current ratio alone settles neither case.

These calculations verify the fixture, not the historical instrument. They do not establish linearity, bandwidth, noise, stability or efficiency. The source-led lesson is that the claimed function of an experiment must match the kind of quantity actually measured.

Sources for this section: [1]

Continue the chronology

Biography context

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Connected biographies

People behind the records

Quick answers

Common questions

Is the model an electrical construction guide?
No. It is arithmetic on stipulated port measurements and omits the information needed to build or assess a real circuit.

Primary and institutional sources

How this history was checked

The cited records have different dates and purposes. All worked examples are newly invented and are not historical measurements. This article was reviewed on 31 October 2026.

  1. John Bardeen; Nobel lecture 11 December 1956Semiconductor Research Leading to the Point Contact Transistor
  2. Walter H. Brattain; Nobel lecture 11 December 1956Surface Properties of Semiconductors
  3. Computer History Museum, The Silicon Engine1947: Invention of the Point-Contact Transistor